Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 596-598
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si:H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500–850 nm with two peaks located at about 630–680 and 730 nm, respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural characteristics, and a tentative explanation of the light emission mechanism is proposed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117918
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