ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Radio-frequency magnetron sputtering was used to deposit SrBi2Ta2O9 ferroelectric thin films on Pt(111)/Ti/SiO2/Si(001) substrates. Thin films were deposited at room temperature with argon pressures of 0.5–100 mTorr and with sputtering power of 2.5 W/cm2. The crystal orientations of thin films were strongly affected by the argon pressures, the c-axis oriented SrBi2Ta2O9 thin film was obtained with argon pressure of 30 mTorr. The crystal structures of the c-axis oriented SrBi2Ta2O9 thin film were investigated by x-ray diffraction methods: θ-2θ scan, rocking curve, and φ scans. The well aligned microstructure was observed with the average grain size of about 2000 A(ring) in an atomic force microscopic image. Ferroelectric properties were observed for the c-axis oriented thin film: Pr*−PrΛ and Ec were 9.7 μC/cm2 and 50 kV/cm, respectively, with excitation voltage of 3 V. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117122
