Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3701-3703
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Direct nitrogen implant into Si substrate prior to gate oxidation has been proposed to grow multiple gate oxide thicknesses on a single wafer. In this letter, we have studied the reliability of gate oxide grown on nitrogen-implanted Si substrate. The effects of implant doses, sacrificial oxide thicknesses, and gate oxide thicknesses on gate oxide reliability have been investigated. It was found that there is a tradeoff between oxide thickness control and gate oxide reliability. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117194
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