Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3719-3721
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline silicon on glass substrates was grown by a method based on the creation of nucleation sites using laser crystallization of amorphous silicon followed by thermal annealing at temperatures below 600 °C. Annealing induces the crystallization of the material around the seeds, eventually leading to coalescence of adjacent domains before spontaneous nucleation sets in. Micro-Raman spectroscopy shows that the seeds experience a tensile stress, which causes a radial birefringence in the surrounding amorphous silicon, detected by optical anisotropy measurements. We conjecture that this stress facilitates the crystallization of the material around the seed upon thermal annealing. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117200
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
