Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2525-2527
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We analyzed the intrinsic defects and the n-type-carrier concentration generated by nitrogen ion implantation in n-type GaN by deep-level-transient spectroscopy and by capacitance–voltage measurements, respectively. The samples were grown on sapphire by metalorganic vapor-phase epitaxy. Nitrogen implantation with different ion doses and postimplantation rapid-thermal annealing (RTA) were investigated. We observed a growing n-type-carrier concentration and increasing defect concentration with increasing nitrogen ion implantation doses. After RTA the concentration of free carriers and deep levels as found in the as-grown state are restored. We also address contrarily seeming results from measurements of sheet resistance after N implantation published recently. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117727
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