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Spin-dependent tunneling in HfO2 tunnel junctions (1996)

Platt, C. L. ; Dieny, B. ; Berkowitz, A. E.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 2291-2293

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We identified reactively sputtered HfO2 as a particularly good material for making thin insulating barriers for spin-dependent tunnel junctions. This material allows one to form pinhole-free tunnel barriers with good transmission of the spin polarization of the tunneling electrons. Magnetic tunnel junctions consisting of a thin layer of HfO2 sandwiched between transition metal electrodes (Co and Fe, for instance) exhibit changes of tunnel resistance up to 30% at low temperature as a function of applied field. This effect can be used in a variety of magnetic field sensing applications or in magnetic random access memory. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117537

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