ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new type of quasi-one-dimensional electron gas has been realized by using molecular beam epitaxy to grow a high mobility heterostructure on a (311)A GaAs substrate selectively etched to expose (100) facets. The electron gas formed on the (100) facets is confined in one lateral dimension by the p–n junctions formed with the adjacent two-dimensional hole gases on (311)A, thereby forming a p–n–p structure. Far-infrared cyclotron resonance spectra demonstrate the dimensionality of such structures and yield typical lateral confinement energies of 22.3 cm−1 and electronic widths of ∼900 nm. These estimates are supported by cathodoluminescence data. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117626