ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
InP/GaAsSb double heterojunction bipolar transistors (DHBTs) may be an attractive alternative to InP/InGaAs DHBTs, since estimates of the band alignment indicate that it is ideal for fabricating n-p-n DHBTs. We have demonstrated the first organometallic chemical vapor deposition grown InP/GaAsSb DHBTs, with carbon-doped bases having an ft and fmax of 30 and 45 GHz, respectively. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116120