Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 738-740
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Continuous wave (cw) operating temperature of 223 K was achieved with molecular beam epitaxy grown separate confinement buried heterostructure (SCBH) PbTe diode lasers with PbEuSeTe electrical and optical confinement layers. This is the highest cw operating temperature reported for midinfrared diode lasers. The active region of the SCBH diode lasers varies laterally to form a crescent-shaped waveguide with a maximum thickness of 0.15 μm and a lateral width of 2 μm. Exceptionally low threshold currents of 102 mA at 200 K, 166 mA at 210 K, and 249 mA at 215 K were measured. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116726
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