ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the fabrication and characterization of Al0.1Ga0.9N/GaN heterojunction field effect transistors, both an enhancement mode and a depletion mode with a low pinchoff voltage, suitable for digital integrated circuit applications. For an enhancement mode device with a 1 μm gate length and 5 μm drain-to-source separation, the dc transconductance is around 23 mS/mm. Connecting the enhancement mode device as a switching transistor and a depletion mode device as a load, we demonstrate an AlGaN/GaN inverter. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116384