Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 3452-3454
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoreflectance measurements have been performed on a δ-doped GaAs homojunction. Two Franz–Keldysh oscillation features originating from two different regions (a buffer layer and a top layer) of the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase, one of the features can be suppressed, thus enabling us to determine the electric fields from the two regions unambiguously. The electric field in the top layer is 3.5±0.2×105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2±0.1×104 V/cm. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115790
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