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  • 1
    Electronic Resource
    Electronic Resource
    Grain boundary effects on carrier transport in undoped polycrystalline chemical-vapor-deposited diamond (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3016-3018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative measure of grain-boundary effects on the carrier transport properties in polycrystalline chemical-vapor-deposited diamond has been obtained using a 10-ns hard x-ray excitation source. Two device geometries were used to gain insight into the extent of grain-boundary effects: one having the applied electric field normal and the other parallel to the grain orientation. The applied electric field intensity was varied to adjust the mean-free carrier drift distance. The degradation in the carrier transport properties at an electric field intensity of 10 kV/cm by the grain-boundary appears to be approximately a factor of two in comparison to the intragrain carrier transport.© 1996 American Institute of Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116682
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