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Effect of boron doping on the crystal quality of chemical vapor deposited diamond films (1996)

Won, J. H. ; Hatta, A. ; Yagyu, H. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2822-2824

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116336

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