Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2867-2869
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Measurement of the room temperature forward bias current-voltage behavior of InGaN/AlGaN double heterostructure blue light-emitting diodes demonstrates a significant departure from the usual Is exp(qV/ nkT) behavior where n is the ideality factor which varies between 1 and 2. The observed current-voltage behavior at room temperature may be represented as I=2.7×10−11 exp(5.7V) which suggests a tunneling mechanism. Measurement of the electroluminescence for currents from 0.5 to 100 mA demonstrates that the emission peak shifts to higher energy while increasing in intensity. The shifting peak spectra is due to band filling, a process which results from the injection of holes via tunneling into an empty acceptor impurity band and vacant valence band tails. At currents near 100 mA, a non-shifting band-to-band emission approaches the intensity of the shifting peak spectra. The active layer of these diodes is codoped with both the donor Si and the acceptor Zn. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116351
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