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Minority-carrier-enhanced reactivation of hydrogen-passivated Mg in GaN (1996)

Pearton, S. J. ; Lee, J. W. ; Yuan, C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2690-2692

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The influence of minority-carrier injection on the reactivation of hydrogen passivated Mg in GaN at 175 °C has been investigated in p-n junction diodes. The dissociation of the neutral MgH complexes is greatly enhanced in the presence of minority carrier and the reactivation process follows second-order kinetics. Conventional annealing under zero-bias conditions does not produce Mg-H dissociation until temperatures ≥450 °C. These results provide an explanation for the e-beam-induced reactivation of Mg acceptors in hydrogenated GaN. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116310

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