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Photopumped infrared vertical-cavity surface-emitting laser (1996)

Hadji, E. ; Bleuse, J. ; Magnea, N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2480-2482

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115827

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