Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 1948-1950
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented demonstrating that an exposed AlAs layer can be sealed against further decomposition as would otherwise occur due to, for example, wet oxidation. A critical processing step consists of a brief 500–600 °C anneal in forming gas of a previously room ambient exposed AlGaAs surface. In the brief high-temperature anneal, a thin but dense surface barrier layer forms which further blocks diffusing oxygen species. The effectiveness of the surface layer as a barrier is demonstrated through its use as a mask against wet oxidation in the fabrication of an all-epitaxial selectively oxidized multimode AlAs/AlGaAs vertical-cavity laser. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115635
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