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Carbon-doped boron nitride cold cathodes (1996)

Pryor, R. W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 1802-1804

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: These results reflect what is believed to be the first observation of electron emission from carbon-doped boron nitride (BN). The n-type BN films were synthesized on n-type polycrystalline diamond on (100)Si using reactive laser ablation. The electron emission current density measured at room temperature shows a power law dependence. Emission currents as high as 60 mA cm−2 have been measured from 150 nm thick n-type BN films on a 24 μm n-type polycrystalline diamond film on a (100)Si substrate. These films show a current density/applied field behavior indicative of negative electron affinity. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116018

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