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Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates (1996)

Rao, K. S. R. K. ; Sreedhar, A. K. ; Bhat, H. L. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 1458-1460

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Fine structure has been observed in the 1.4 eV luminescence band of thin (≈100 A(ring)) amorphous silicon (a-Si:H) layers deposited on silicon substrates. The energy separation between the peaks is ≈20 meV. A similar luminescence band observed in layers grown on glass substrates under the same conditions is several orders of magnitude lower in intensity and is without perceptible fine structure. There is no change in the nature of the fine structure and the peak energies in films deposited at different substrate temperatures (150–300 °C). The dependence of the luminescence band on illumination intensity and on temperature has also been measured. This indicates probable excitonic nature of the luminescence. Possible causes for the observed phenomena are discussed. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116253

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