Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1122-1124
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be concentration in the films reaches 1–2×1019 cm−3 while the hole concentration saturates at a lower value (large-closed-square)∼2×1018 cm−3 in our case). The measured lattice mismatch between film and substrate depends both on growth temperature and Be flux. The resulting changes in morphology suggest that the excess Be forms microclusters in the films grown at higher temperatures—due to the higher surface mobility, leading to the growth of oval defects. Be rejection to the surface is also observed. The surfaces of samples with no cap layer present a granulation which may be related to the formation of a new phase like Be3P2. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114981
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
