Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1157-1159
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 1014–1015/cm2. This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm2 can be as low as 42 V/μm for the as-implanted diamond compared to 164 V/μm for the high quality p-type diamond. When the ion-implanted samples were annealed at high temperatures in order to anneal out the implantation-induced defects, the low-field electron emission capability of diamond disappeared. These results further confirm our earlier findings about the role of defects in the electron emission from undoped or p-type doped diamond and indicate that the improved emission characteristics of as-implanted diamond is due to the defects created by the ion implantation process. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114993
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