Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 688-690
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We performed nitrogen atomic-layer doping into GaAs grown by molecular beam epitaxy using nitrogen molecules (N2) cracked by a hot tungsten filament. While uniformly nitrogen-doped GaAs layers show relatively weak nitrogen-related photoluminescence lines, nitrogen atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines. The dominant photoluminescence line was observed at 1.4437 eV, where an exciton bound to the nitrogen isotropic traps has the highest binding energy. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115204
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