Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 488-490
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Material transformations occurring at the facets of optically "stressed'' planar InGaAsP/InP diode lasers have been investigated by transmission electron microscopy and energy dispersive x-ray spectroscopy. Catastrophic degradation lines (CDLs) which are characteristic of catastrophic optical damage are observed for optical power densities ∼107 W/cm2. Analysis of the microstructure reveals a series of 150 nm wide GaAs-rich tracks and the formation of unique void/InGa-rich precipitate pairs within the InGaAsP active layer. These observations suggest that the formation of local group III-rich regions is the first stage in the formation of CDLs. Subsequently, the strong absorption of the impinging laser beam leads to propagation of an InGa-rich melt, thereby producing the GaAs-rich tracks through a process similar to liquid phase epitaxy. These results are discussed in the context of standard physical models for CDLs. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114545
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