Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 3617-3619
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Spontaneously formed long-range Al-rich and Ga-rich AlxGa1−xAs/AlyGa1−yAs superlattice in (111)A was demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in 0.75 μm Al0.30Ga0.70As grown on (111)A GaAs substrates at 640 °C. In contrast, none of the above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. 15 K photoluminescence (PL) showed a 31 meV redshift and six times peak intensity enhancement in layers grown on (111)A substrates to that on (100). A reduced long-range compositional modulation can be achieved by growth at higher temperatures and is shown in the finer and moderately modulating (111)A Al0.40Ga0.60As grown at 700 °C. A 15 K PL linewidth of 17 meV was achieved in 700 °C grown (111)A A0.40Ga0.60As that is the narrowest reported linewidth for (111)A AlGaAs. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115336
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