Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 3322-3324
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Quantization of band-to-band transition in a Si doped GaN/AlGaN quantum well was investigated. A good fit to the room-temperature photoluminescence (PL) spectrum of the GaN quantum well studied was obtained using values 0.3me and 0.19me for the heavy hole and conduction electron effective masses, respectively, and a 67:33 conduction to valence band offset. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115234
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |