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Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands (1995)

Fujiwara, A. ; Takahashi, Y. ; Murase, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 2957-2959

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A Si single-electron transistor (SET) with satellite Si islands has been fabricated by pattern-dependent oxidation of cross-shaped Si wires on a separation by implanted oxygen (SIMOX) substrate. The oscillatory conductance-versus-gate voltage characteristics of the SET show hysteresis as a result of abrupt jumps in the conductance at high temperatures around 30 K. This phenomenon is attributed to the memory effect of a single electron that tunnels between the SET Si island and the satellite Si islands. Time-resolved measurements have clarified that the conductance jump is a Poisson process, which is clear evidence of the single-electron tunneling between the Si islands. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114824

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