Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1966-1968
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ultrafast absorption studies on free-standing porous silicon films have been carried out at room temperature to investigate the carrier dynamics and the luminescence mechanism. Ultraviolet and visible excitations were used on an as-prepared sample and two annealed samples. Transient absorption curves of UV pumped, as-prepared samples contain a fast decay (τf) of 0.8±0.2 ps and a slower decay of (approximately-greater-than)30 ps. τf is found to be shorter for both the 500 °C annealed sample with UV excitation and for the as-prepared sample with visible excitation. The faster decay rates suggest that the subpicosecond component of the transient absorption may be due to carrier thermalization rather than core-to-surface state excitation transfer. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114755
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