ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Homoepitaxial diamond films were deposited onto (110) single crystal substrates using oxy-acetylene torch deposition at a constant substrate temperature of 1150 °C. Growth-etch cycling of the deposition increased the linear growth rates of the (100) and (111) faces by a factor of 2. The growth-etch films were shown to be less transparent in the infrared than the reference depositions as determined by microfocus Fourier transform infrared spectroscopy. Using the growth-etch technique, the growth rates of the (100), (111), and (110) faces decreased with increasing hydrogen addition to the combustion flame for hydrogen flow rates up to 50% of the acetylene flow rate. The additional hydrogen did not improve the growth-etch films' transparency. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115420
