Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 85-87
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Molecular beam epitaxy of Si1−xGex alloys, using gaseous Si2H6 and solid Ge as sources, has been studied over the entire composition range (0≤x≤1). From the measured growth rates as a function of x, it is clear that the presence of Ge tends to decrease the Si incorporation rate. This establishes growth via adatom migration to kink sites in a dissociative chemisorption process. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115516
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