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Formation and decay dynamics of excitonic photoluminescence in a GaAs/AlGaAs superlattice under an electric field (1995)

Schneider, H. ; Kanamoto, K. ; Fujiwara, K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 905-907

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Photoluminescence (PL) dynamics of localized excitons in a strongly coupled 40 A(ring)/40 A(ring) GaAs/Al0.2Ga0.8/As superlattice under an electric field along the growth direction is reported. At zero field, a delayed PL formation due to the relaxation of dark excitons into radiative states is observed. With increasing field, both the PL decay time and the PL amplitude are strongly reduced. A rate equation analysis of the measured PL transients gives evidence that the field-induced dissociation of nonradiative excitons is important. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113592

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