Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 730-732
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hot electrons injected with a scanning tunnel microscope (STM) tip into Pt/SiO2/Si(100) structures were detected as a collector current in the Si by using a STM configuration known as ballistic electron emission microscopy. The collector current, observed for STM tip potentials (approximately-greater-than)4 V and for oxide biases ≥0 V, is direct evidence for electron transmission through the conduction band of the SiO2. Negative oxide biases delayed the onset of current to correspondingly higher tip potentials. A simple model was used to extract the energy and bias dependent transmission probabilities from the experimental data for a 62 A(ring) SiO2 layer. The results are compared with Monte Carlo calculations. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114114
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