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Digitale Medien

In-plane photocurrent spectroscopy in GaAs-AlAs superlattices (1995)

Schrottke, L. ; Grahn, H. T. ; Klann, R. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1533-1535

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The in-plane photoconductivity of GaAs-AlAs superlattices on GaAs substrates is experimentally studied as a function of the incident photon energy at different temperatures and light intensities. Superlattice and substrate are electrically isolated by a thick Al0.3Ga0.7As barrier but connected through penetrating contacts. Depending on the transport properties of the two subsystems pseudo-negative photoconductivity can be observed, i.e., at the absorption maximum of the superlattice the photocurrent exhibits a minimum. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.113637

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