Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 3188-3190
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High quality vanadium dioxide (VO2) thin films have been successfully deposited by pulsed laser deposition without postannealing on (0001) and (101¯0) sapphire substrates. X-ray diffraction reveals that the films are highly oriented with (010) planes parallel to the surface of the substrate. VO2 thin films on (0001) and (101¯0) substrates show semiconductor to metal transistions with electrical resistance changes as large as 4×104, 105, respectively. Thin films on (101¯0) substrate have a transition at as low as 55 °C with a hysteresis less than 1 °C. These transition properties are comparable with single crystal VO2. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112476
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