Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2720-2722
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Four n-i-n GaAs/AlGaAs diodes have been used to demonstrate that at room temperature the carrier blocking is influenced by the X-valley superlattice in a multiquantum barrier. The diode with a Γ-X crossover multiquantum barrier has a current at least three orders lower than the corresponding diode with only a bulk barrier. However, diodes without Γ-X crossover barriers have resistance as low as 10 Ω in spite of whether a multiquantum barrier exists or not. This indicates that the X-valley superlattice plays an important role in blocking the current flowing across/through a multiquantum barrier. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112546
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