ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Carrier-induced strain effect in Si and GaAs nanocrystals (1994)

Zhao, X. S. ; Ge, Y. R. ; Schroeder, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 2033-2035

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: New experimental results on Raman scattering from porous silicon and silicon and gallium arsenide nanocrystals are reported. In all of these systems, almost all vibrational modes become Raman active and are remarkably soft. A carrier-induced strain model is proposed to explain the optical properties of these nanocrystal systems. According to this carrier-induced strain model, the selection rule of crystal momentum conservation for Raman scattering is greatly relaxed in Si and GaAs nanocrystals due to the dilatation strain caused by coupling of excited free carriers with the particle lattice and the optical properties of such systems are dominated by multiphonon assisted free-electron transition processes. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.112999

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit