Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 1799-1801
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Crystallized Ge films have been produced in a plasma enhanced chemical vapor deposition system by the decomposition of H2-diluted GeH4 gas source while using the H2 plasma treatment. Structural analyses of the films using x-ray diffraction and transmission electron microscopy techniques revealed a new crystalline structure in the Ge microcrystallites with a diameter of about 5 nm, which is different from the normal diamond structure of crystalline Ge. This new nanometer crystalline structure has been explained to be a metastable nanometer-sized atomic configuration formed in the film deposition process. © 1994 American Institue of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112848
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