Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 1683-1685
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The defect density ND of hydrogenated amorphous germanium (a-Ge:H) has been studied as a function of the Fermi level position EF using photothermal deflection spectroscopy. A strong increase of ND is observed as EF is shifted towards either one of the band edges by doping with boron or phosphorus, respectively. This behavior is similar to that of amorphous silicon (a-Si:H) and can be explained by a hydrogen-mediated equilibrium between weak bonds and dangling bonds. From a fit of this model to our data the lowest limit of the defect density in a-Ge:H is estimated to be 2×1016 cm−3, which is larger by about two orders of magnitude than in a-Si:H. The reason for this difference is the smaller band gap of a-Ge:H which entails smaller formation energies of dangling-bond defects than in a-Ge:H.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112885
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
