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Plasma nitrogen doping of ZnTe, Cd1−xZnxTe, and CdTe by molecular beam epitaxy (1994)

Baron, T. ; Tatarenko, S. ; Saminadayar, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 1284-1286

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The p-type doping of ZnTe, CdTe, and Cd1−xZnxTe (CZT) using a nitrogen dc plasma source during growth by molecular beam epitaxy is demonstrated. For ZnTe, doping levels as high as 1020 cm−3 were achieved. In CZT alloys, a progressive decrease of the maximum doping level is observed for decreasing Zn content. Using pulse doping methods, a doping level of p≈3×1018 cm−3 is obtained for a 12% Zn CZT layer. For CdTe layers, the highest level achieved is p≈1017 cm−3. The progressive acceptor compensation phenomenon is discussed with emphasis on the role of the lattice distortion on the nitrogen incorporation mechanisms.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.112096

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