ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In Si/SiGe/Si heterojunction bipolar transistor structures, very shallow arsenic implant on the emitter has been found to cause anomalous boron diffusion in the base. This phenomenon imposes stringent constraints on the device fabrication processes. We discovered that by using platinum silicide, which also served as a self-aligned low resistance contact material to the emitter and base, the anomalous diffusion in the base was significantly reduced. In this letter, we report the experiment results, and propose possible explanations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111306