Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3296-3298
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A quasi-one-dimensional electron gas has been realized by using molecular beam epitaxy to grow a high electron mobility transistor (HEMT) on a patterned GaAs structure consisting of alternate layers of p-GaAs and n-GaAs. Independently contacting the p-GaAs and n-GaAs creates a patterned backgate, which is used to electrostatically induce a lateral modulation of the electron gas in the HEMT. Far-infrared cyclotron resonance spectra demonstrate that lateral confinement energies over the range 1.3–3.3 meV may be selected via tuning of the biases applied to the p-GaAs and n-GaAs layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111315
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