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Rhodium- and iridium-related deep levels in In0.53Ga0.47As (1994)

Srocka, B. ; Scheffler, H. ; Bimberg, D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 2679-2681

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We investigated the doping of In0.53Ga0.47As with rhodium and iridium by liquid phase epitaxy and observed for the first time Rh- and Ir-related levels in InGaAs by means of deep level transient spectroscopy. Both dopants were found to produce near-midgap levels. The available data support an association of these levels with the transition metal (TM)2+/3+-single acceptor transitions caused by substitutionally incorporated TM ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, on the order of 1×10−6.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111978

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