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Low energy kinetic threshold in the growth of cubic boron nitride films (1994)

Kidner, S. ; Taylor, C. A. ; Clarke, Roy

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 1859-1861

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the growth of cubic boron nitride (cBN) films by magnetron sputtering on Si (100) substrates. The films are grown in the presence of negative substrate bias voltages and a nitrogen plasma produced by an electron cyclotron resonance source. We find evidence for a sharp low-voltage threshold in the substrate bias (−105 V) beyond which the samples are predominantly cBN. The structural quality of the cBN films is optimized in a narrow range of voltages near this threshold. We discuss the important role of energetic ions in the formation of cBN in light of recent theoretical findings.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111779

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