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Kinetic pattern formation of Gd-silicide films in lateral growth geometry (1994)

Molnár, G. ; Petô, G. ; Horváth, Z. E. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 64 (1994), S. 1679-1680

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The solid phase reaction of gadolinium thin film and silicon substrate was investigated in lateral growth geometry with the help of periodic titanium protective stripes by optical microscopy. In the lateral reaction zone the shape of the interface between gadolinium and Gd silicide was very complicated and showed pattern formation. This silicide growth can be described as a kinetic process modified by the structure of the Gd film in contrast to the previously proposed simple nucleation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.111829

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