Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1215-1217
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 A(ring)/min, which is much higher than that of the ordinary evaporation. Hall effect measurement showed that the observed low resistivity is primarily due to the high electron mobility (≥70 cm2/V s) with carrier density up to 7×1020/cm3. These properties were correlated with the atomic concentration data by Auger electron spectroscopy and x-ray photoelectron spectroscopy. It has been found that the films of low resistivity had the atomic ratio of O to In of 1.29–1.31.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110893
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