Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 797-799
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter we present the results of a photoluminescence study of the interdiffusion of arsenic and phosphorous in the In0.66Ga0.33As/In0.66Ga0.33As0.7P0.3 system over the temperature range 950–600 °C. We have shown that the diffusion is Fickian with no dependence of the diffusion coefficient on the substrate doping type or etch pit density. For both tin- and sulfur-doped substrates the diffusion can be described by a diffusion coefficient D, which is given by D=D0 exp(−EA/kT), where D0=23 cm2/s and EA=3.7 eV for temperatures greater than 675 °C. This activation energy is the same as that determined for the group III interdiffusion in In0.2Ga0.8As/GaAs. Below this temperature a lower activation energy process takes over with D0=5×10−10 cm2/s and EA=1.7 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109911
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