ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A systematic study of the optical properties of strained InxGa1−xAs/AlyGa1−yAs (x=0.16, y=0.33) single quantum-well structures grown by molecular-beam epitaxy is presented. An optimized growth procedure is shown to produce quantum-well structures exhibiting 2 K photoluminescence linewidths as low as 2.6 meV, very close to those observed for corresponding InxGa1−xAs/GaAs control structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109920