Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 625-627
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the electronic passivation of n- and p-type GaAs using chemical vapor deposited cubic GaS. Au/GaS/GaAs fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor versus voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of ∼1011 eV−1 cm−2 on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109970
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |