Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 186-188
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results on the in-plane electron drift velocities and mobilities in strained Si layers grown on Si1−xGex substrates are reported for 300 and 77 K. High-field drift velocities are calculated by Monte Carlo simulations and low-field mobilities by numerical solution of Boltzmann's equation including intra- and intervalley phonon and impurity scattering mechanisms. Significant improvements of drift velocities relative to bulk Si are found for electric fields up to several 10 kV/cm, while saturation occurs at the bulk values for both temperatures. A much stronger mobility enhancement of 74% is obtained at 300 K compared to 36% at 77 K, which is consistent with recent experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110394
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