Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 1821-1823
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The reactions of Si2H6 with the (100) and (111) surfaces of silicon have been investigated employing supersonic molecular beam scattering techniques. Incident translational energy has been found to influence strongly the probability of dissociative adsorption (SR) on both surfaces. The reaction on the Si(111) surface is distinct from that observed on Si(100) concerning the dependence of SR on the substrate temperature and the incident angle. In particular, the reaction on the (111) surface shows sensitivity to the surface phase transformation (7×7)→(1×1) that occurs above 825 °C. Both the dangling bond density and the effective corrugation of the surface are important in determining the reaction probability.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110674
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
