Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 840-842
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm−3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108568
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